IN168381B - - Google Patents
Info
- Publication number
- IN168381B IN168381B IN123/CAL/87A IN123CA1987A IN168381B IN 168381 B IN168381 B IN 168381B IN 123CA1987 A IN123CA1987 A IN 123CA1987A IN 168381 B IN168381 B IN 168381B
- Authority
- IN
- India
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
- H10F71/1035—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials having multiple Group IV elements, e.g. SiGe or SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IN710/CAL/89A IN169840B (en]) | 1986-02-18 | 1989-08-31 | |
| IN712/CAL/89A IN169759B (en]) | 1986-02-18 | 1989-08-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83007386A | 1986-02-18 | 1986-02-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IN168381B true IN168381B (en]) | 1991-03-23 |
Family
ID=25256250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IN123/CAL/87A IN168381B (en]) | 1986-02-18 | 1987-02-13 |
Country Status (12)
| Country | Link |
|---|---|
| EP (1) | EP0233613B1 (en]) |
| JP (1) | JPH06103667B2 (en]) |
| KR (1) | KR910001876B1 (en]) |
| CN (1) | CN1024929C (en]) |
| AT (1) | ATE120884T1 (en]) |
| AU (3) | AU604227B2 (en]) |
| CA (1) | CA1332343C (en]) |
| DE (1) | DE3751209T2 (en]) |
| EG (1) | EG18056A (en]) |
| ES (1) | ES2074041T3 (en]) |
| IE (1) | IE870367L (en]) |
| IN (1) | IN168381B (en]) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EG18056A (en) * | 1986-02-18 | 1991-11-30 | Solarex Corp | Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices |
| DE69032290T2 (de) * | 1989-06-28 | 1999-03-18 | Mitsui Chemicals, Inc., Tokio/Tokyo | Verfahren zur Herstellung einer amorphen Halbleiterschicht |
| DE3941997C1 (en) * | 1989-12-20 | 1991-01-24 | Phototronics Solartechnik Gmbh, 8011 Putzbrunn, De | Prepn. of di-, tri- or tetra-silyl-methane - by reacting aryl-halo-silane with di-, tri- or tetra -halo-methane in presence of reducing metal, and reacting prod. with hydrogen halide |
| DE3942058A1 (de) * | 1989-12-20 | 1991-06-27 | Phototronics Solartechnik Gmbh | Tetrasilylmethan und verfahren zu dessen herstellung |
| EP1092755A4 (en) | 1999-03-30 | 2004-12-22 | Jsr Corp | COATING COMPOSITION |
| WO2002080244A2 (en) | 2001-02-12 | 2002-10-10 | Asm America, Inc. | Improved process for deposition of semiconductor films |
| US7186630B2 (en) | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
| US7981392B2 (en) * | 2004-09-14 | 2011-07-19 | The Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University | Hydride compounds with silicon and germanium core atoms and method of synthesizing same |
| US7312128B2 (en) * | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
| JP5265376B2 (ja) * | 2005-11-23 | 2013-08-14 | アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティ | 新規な水素化シリコンゲルマニウム、その製造法および使用法 |
| EP1918966A1 (en) * | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Method for forming a film with a graded bandgap by deposition of an amorphous material from a plasma |
| EP1918967B1 (en) | 2006-11-02 | 2013-12-25 | Dow Corning Corporation | Method of forming a film by deposition from a plasma |
| EP1919264A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Device for forming a film by deposition from a plasma |
| EP1918965A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Method and apparatus for forming a film by deposition from a plasma |
| EP1918414A1 (en) | 2006-11-02 | 2008-05-07 | Dow Corning Corporation | Film deposition of amorphous films with a graded bandgap by electron cyclotron resonance |
| EP1923483A1 (en) | 2006-11-02 | 2008-05-21 | Dow Corning Corporation | Deposition of amorphous silicon films by electron cyclotron resonance |
| CN103275113B (zh) | 2007-03-30 | 2016-12-28 | 印度龙树肥料化工有限公司 | 四卤化硅或有机卤硅烷的等离子体辅助的有机官能化 |
| US8043980B2 (en) * | 2007-04-02 | 2011-10-25 | Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University | Methods for making and using halosilylgermanes |
| NO342873B1 (no) | 2008-02-11 | 2018-08-20 | Inst Energiteknik | Halvlederkomponent |
| CN103628044A (zh) * | 2013-11-07 | 2014-03-12 | 中山市创科科研技术服务有限公司 | 一种利用光化学气相沉积制备α_SiH膜的设备 |
| CN109686802A (zh) * | 2018-11-09 | 2019-04-26 | 惠州凯珑光电有限公司 | 一种电子元器件和模组的封装工艺 |
| TW202426689A (zh) * | 2021-12-23 | 2024-07-01 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | V族元素的新型無機矽基和聚矽基衍生物及其合成方法和使用其沈積之方法 |
| CN115117201B (zh) * | 2022-06-24 | 2024-03-12 | 英利能源发展有限公司 | 一种硅片磷或硼掺杂的方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4226897A (en) * | 1977-12-05 | 1980-10-07 | Plasma Physics Corporation | Method of forming semiconducting materials and barriers |
| FR2485810A1 (fr) * | 1980-06-24 | 1981-12-31 | Thomson Csf | Procede de realisation d'une couche contenant du silicium et dispositif de conversion photo-electrique mettant en oeuvre ce procede |
| JPS59182521A (ja) * | 1983-04-01 | 1984-10-17 | Mitsui Toatsu Chem Inc | 水素化シリコン薄膜の形成方法 |
| JPS59200248A (ja) * | 1983-04-28 | 1984-11-13 | Canon Inc | 像形成部材の製造法 |
| DE3429899A1 (de) * | 1983-08-16 | 1985-03-07 | Canon K.K., Tokio/Tokyo | Verfahren zur bildung eines abscheidungsfilms |
| JPS60117712A (ja) * | 1983-11-30 | 1985-06-25 | Toshiba Corp | 薄膜形成方法 |
| JPS60154521A (ja) * | 1984-01-23 | 1985-08-14 | Semiconductor Energy Lab Co Ltd | 炭化珪素被膜作製方法 |
| JPH0669029B2 (ja) * | 1984-07-25 | 1994-08-31 | 工業技術院長 | Ｐ型半導体薄膜の形成方法 |
| US4695331A (en) * | 1985-05-06 | 1987-09-22 | Chronar Corporation | Hetero-augmentation of semiconductor materials |
| GB2177119B (en) * | 1985-06-26 | 1989-04-26 | Plessey Co Plc | Organometallic chemical vapour deposition |
| IL79612A0 (en) * | 1985-08-09 | 1986-11-30 | American Cyanamid Co | Method and apparatus for the chemical vapor deposition of iii-v semiconductors utilizing organometallic and elemental pnictide sources |
| US4690830A (en) * | 1986-02-18 | 1987-09-01 | Solarex Corporation | Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices |
| EG18056A (en) * | 1986-02-18 | 1991-11-30 | Solarex Corp | Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices |
-
1987
- 1987-02-10 EG EG77/87A patent/EG18056A/xx active
- 1987-02-12 IE IE721419A patent/IE870367L/xx unknown
- 1987-02-13 DE DE3751209T patent/DE3751209T2/de not_active Expired - Fee Related
- 1987-02-13 ES ES87102090T patent/ES2074041T3/es not_active Expired - Lifetime
- 1987-02-13 AT AT87102090T patent/ATE120884T1/de active
- 1987-02-13 IN IN123/CAL/87A patent/IN168381B/en unknown
- 1987-02-13 EP EP87102090A patent/EP0233613B1/en not_active Expired - Lifetime
- 1987-02-16 CA CA000529799A patent/CA1332343C/en not_active Expired - Fee Related
- 1987-02-16 AU AU68839/87A patent/AU604227B2/en not_active Ceased
- 1987-02-17 JP JP62034388A patent/JPH06103667B2/ja not_active Expired - Lifetime
- 1987-02-18 CN CN87100729A patent/CN1024929C/zh not_active Expired - Fee Related
- 1987-02-18 KR KR1019870001347A patent/KR910001876B1/ko not_active Expired
-
1990
- 1990-09-24 AU AU63080/90A patent/AU640408B2/en not_active Ceased
- 1990-11-30 AU AU67671/90A patent/AU637852B2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| AU604227B2 (en) | 1990-12-13 |
| AU6883987A (en) | 1987-08-20 |
| EP0233613B1 (en) | 1995-04-05 |
| CN87100729A (zh) | 1987-11-25 |
| AU6767190A (en) | 1991-03-14 |
| ATE120884T1 (de) | 1995-04-15 |
| CA1332343C (en) | 1994-10-11 |
| AU637852B2 (en) | 1993-06-10 |
| EP0233613A2 (en) | 1987-08-26 |
| EP0233613A3 (en) | 1990-11-28 |
| AU6308090A (en) | 1990-12-13 |
| DE3751209D1 (de) | 1995-05-11 |
| IE870367L (en) | 1987-08-18 |
| DE3751209T2 (de) | 1995-08-10 |
| JPH06103667B2 (ja) | 1994-12-14 |
| JPS6351680A (ja) | 1988-03-04 |
| AU640408B2 (en) | 1993-08-26 |
| KR870008376A (ko) | 1987-09-26 |
| ES2074041T3 (es) | 1995-09-01 |
| EG18056A (en) | 1991-11-30 |
| CN1024929C (zh) | 1994-06-08 |
| KR910001876B1 (ko) | 1991-03-28 |